CORESIC^® RBS H Reaction bonded silicon infiltrated silicon carbide (SiSiC), by Slip Casting, high purity
 

Material Characteristics

Selection of different particle size of high-purity silicon carbide powder, high-purity carbon source mixing, through the slurry molding to prepare a high-purity green body, and selection of 5N high-purity polysilicon under vacuum for high-temperature infiltration of silicon reaction sintering, the sintering temperature of 1600 ℃ ~ 1700 ℃ or more, the high-purity silicon vapor through the role of the capillary infiltration of the billet containing pores, and billet in the carbon elements of the chemical reaction between the in-situ generation of β-SiC and billet The in-situ generated β-SiC combines with the original SiC particles in the billet to form reaction sintered silicon carbide ceramic materials.

Superior Properties

• High strength.
• CORESIC^® RBS H Silicon Carbide ceramics offer superior flexural strength, three times that of quartz, and higher load carrying capacity.
• High temperature resistance.
• CORESIC^® RBS H silicon carbide ceramics have a maximum service temperature of 1350°C. Even at this temperature, they can be used for long periods of time, preventing parts and assemblies from thermal deformation and softening. This is higher than the maximum operating temperature of 1070°C for quartz components
• Oxidation Resistance
• The excellent oxidation resistance of  makes it possible to keep cantilever paddles, cantilever beams, cantilever rods, boat rests, crystal boats and other components made of CORESIC^® RB H silicon carbide ceramics free of particles, which contributes to the quality of the cell product and the life of the equipment components.
• Chemical stability.
• CORESIC^® RBS H's extremely high chemical stability during etch cleaning protects against HF or HF+HNO3. The etching rate is less than 1/1000 compared to quartz. the surface of the silicon carbide ceramic parts remains unchanged after the acid cleaning process, which does not introduce particulate impurities into the system and also extends the life of the silicon carbide parts considerably. From the perspective of an automated wafer transfer system, the wafer bath maintains its accuracy unchanged during the cleaning process.
• CORESIC^® RBS H has a similar coefficient of thermal expansion to silicon nitride and polysilicon.

Features and Applications

CORESIC^® RBS H is a high-strength silicon carbide material developed specifically for PV cell thermal and coating equipment, suitable for the development and manufacture of a variety of complex structural products, such as cantilever paddles, boat rests, crystal boats, furnace tubes. High silicon carbide content (>85%), high strength, resistance to strong acid and alkali corrosion, good oxidation resistance. The material is widely used in photovoltaic and semiconductor fields, which can replace the application of quartz material.

Material Performance Table