CORESIC^® RBP H Reaction bonded silicon infiltrated silicon carbide (SiSiC), formed by CIP, high purity
 

Material Characteristics

The use of different particle size particle gradation of high-purity silicon carbide micropowder as raw materials, adding a mixture of high-purity carbon source as the second phase, adding binder, dispersant and other organic solvents, through the spray granulation molding, molding process, the production of high-purity green body, high-temperature vacuum or argon protection and 5N high-purity polysilicon reaction sintering, sintering temperature is usually in the range of 1600-1800 ° C, the sintering density is usually 3.0- 3.05g/cm³, the free silicon content is usually 15-20%.

Superior Properties

• High strength.
• CORESIC^® RB H Silicon Carbide ceramics have excellent flexural strength, 3 times that of quartz, and higher load carrying capacity.
• High temperature resistance.
• CORESIC^® RB H silicon carbide ceramics have a maximum service temperature of 1350°C. Even at this temperature, they can be used for long periods of time, preventing parts and assemblies from thermal deformation and softening. This is higher than the maximum operating temperature of 1070°C for quartz components.
• Oxidation Resistance
• The excellent oxidation resistance of  makes it possible to keep cantilever paddles, cantilever beams, cantilever rods, boat rests, crystal boats and other components made of CORESIC^® RB H silicon carbide ceramics free of particles, which contributes to the quality of the cell product and the life of the equipment components.
• Chemical stability.
• CORESIC^® RB H SiC's extremely high chemical stability during etch cleaning protects against HF or HF+HNO3. The etching rate is less than 1/1000 compared to quartz. the surface of the SiC ceramic parts remains unchanged after acid cleaning, which does not introduce particulate impurities into the system and also extends the life of the SiC parts considerably. From the point of view of the automated wafer transfer system, the wafer bath maintains its accuracy during the cleaning process.
• CORESIC^® RB H SiC has a similar coefficient of thermal expansion to silicon nitride and polysilicon.

Features and Applications

CORESIC^® RBP H is a highly thermally conductive, wear-resistant, high-purity reactive sintered silicon carbide material developed specifically for fluidized bed granular silicon lined cylinders, with excellent mechanical and physical properties and very low impurity content. It can also be used to make other high-purity silicon carbide components.

Material Performance Table