Silicon carbide PVD carrier plate
CORESIC® SP silicon carbide PVD carrier is formed by isostatic pressing and high temperature sintering. The outer diameter, thickness size, number of acupuncture points, size, position and shape of the film-taking slot can also be processed according to the requirements of the user's design drawings to meet the specific requirements of the users.
Typical application
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The PVD (Physical Vapor Deposition) process in LED chip manufacturing, also known as physical vapor deposition.
Features and advantages
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High density.
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Good thermal conductivity, low expansion coefficient and uniform temperature performance.
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Resistance to plasma impact.
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Corrosion resistant to various strong acid and alkali chemical reagents.
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After semiconductor level cleaning.
Specification
| Diameter | Tolerance | Thickness | Tolerance | Wafer size and quantity |
| 230 | ±0.1 | 3 | ±0.05 | 4inch 3pcs |
| 300 | ±0.1 | 1.4 | ±0.05 | 4inch 5pcs |
| 300 | ±0.1 | 3 | ±0.05 | 4inch 5pcs |
| 330 | ±0.1 | 1.4 | ±0.05 | 4inch 7pcs， 6inch 2pcs |
| 330 | ±0.1 | 3 | ±0.05 | 4inch 7pcs， 6inch 2pcs |
