Silicon carbide ICP carrier plate
CORESIC® SP silicon carbide ICP carrier is formed by isostatic pressing and high temperature sintering. The outer diameter, thickness size, number of acupuncture points, size, position and shape of the film-taking slot can also be processed according to the requirements of the user's design drawings to meet the specific requirements of the user.
Typical application
-
The ICP (Inductively Coupled Plasma) etching process in LED chip manufacturing, which is inductively coupled plasma etching.
Features and advantages
-
Good thermal conductivity, low expansion coefficient and uniform temperature performance.
-
Resistance to plasma impact.
-
Can be made according to the customer's specific size requirements, the maximum diameter can reach 495mm.
-
Corrosion resistant to various strong acid and alkali chemical reagents.
Specification
| Diameter | Tolerance | Thickness | Tolerance | Wafer size and quantity |
| 380 | ±0.1 | 4.4 | ±0.05 | 4inch 9pcs， 6inch 3pcs |
| 380 | ±0.1 | 3 | ±0.05 | 4inch 9pcs， 6inch 3pcs |
| 330 | ±0.1 | 4.4 | ±0.05 | 4inch 7pcs， 6inch 1pc |
| 330 | ±0.1 | 3 | ±0.05 | 4inch 7pcs， 6inch 1pc |
